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12 inch Sapphire substrate

Specific Information
JXT Company produces 12-inch sapphire substrate wafers, vital for semiconductor manufacturing in optoelectronic devices like LEDs and laser diodes due to their exceptional material properties. With a diameter of 300mm, these wafers enhance production efficiency and reduce costs compared to smaller sizes. Despite technical challenges, advancements in manufacturing enable JXT Company to deliver high-quality wafers for demanding optoelectronic applications.
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  • specification
  • Properties
  • ItemSapphire Substrate(12inch)
    Diameter300.0 ± 0.5mm
    Thickness2000 ± 50μm
    Surface OrientationC-plane (0001) off-angle toward M-axis(10-10) 0 ± 0.5°
    C-plane (0001) off-angle toward A-axis(11-20) 0 ± 0.5°
    Primary Flat OrientationA-Plane (11-20) ± 1.0°
    Primary Flat LengthNotch
    Front Surface FinishEpi-polished,Ra<0.5nm
    Back Surface FinishDSP:Epi-polished,Ra<0.5nm
    Laser MarkN/A
    TTV≤30μm
    BOW≤45μm
    WARP≤60μm
    Edge Exclusion≤3 mm


    Customization specifications:

    * Various orientations such as A/R/M/N Plane, C off M(1°-10°), C off A(1°-10°).

    * Various sizes and shapes such as 10*10mm,12inch

    * Various thicknesses:0.1~20mm

    * Various surface roughness such as slicing,lapping,polishing.

    * Sapphire crystal ingots are available.


  • The sapphire is a crystalline form of aluminum oxide(α-Al2O3) with a hexagonal structure, which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds. The chemical properties of sapphire crystal are very stable, insoluble in water, and excellent corrosion resistance to strong acids and strong alkalis. The sapphire crystal has a high hardness of 9 on the Mohs scale, a melting point of 2050°C, a boiling point of 3500°C, and a maximum working temperature of 1900°C. Sapphire wafer has high light transmission,low thermal conductivity,good electrical insulation,excellent mechanical properties, and good wear resistance and scratch resistance.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=4.76Å c=12.99Å
    Density(g/cm3)3.98
    Melting point(℃)2040
    Mohs Hardness(mohs)9
    Dielectric Constant9.3(A plane)
    11.5(C plane)
    Thermal Conductivity(W/cm.K)0.46
    Thermal Expansion 6.7*10-6/k(C plane)           5.0*10-6/k(A plane)
    Refractive Index 1.762-1.777
    Transmission Test sample:Sapphire:D76.2*4mm
    UV:200~380nm  74%~84%
    Visible light:380~760nm  85% 
    Infrared:760~1000nm      85%
    Far-Infrared:>1000nm   80%~100%


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