| Item | Gallium Arsenide Substrate（2~6inch ） | |||
| Diameter | 50.8±0.3mm | 76.2±0.3mm | 100.0±0.3mm | 150.0±0.5mm |
| Thickness | 350±25μm | 350±25μm | 350±25μm | 675±25μm |
| Surface Orientation | (100) 15.0˚± 1.0˚ off toward (111) | <100>±1.0° | ||
| Primary Flat Orientation | EJ<0-1-1>±1.0° | |||
| Primary Flat Length | 12.0±1.5mm | 22.0±2.0mm | 32.0±2.0mm | Notch |
| Secondary Flat Orientation | EJ<0-1 1>±1.0° | N/A | ||
| Secondary Flat Length | 7.0±1.5mm | 12.0±2.0mm | 18.0±2.0mm | N/A |
| Front Surface Finish | Epi-polished | |||
| Back Surface Finish | SSP:Etched; DSP:Epi-polished | |||
| Laser Mark | Back side | |||
| TTV | ≤10μm | ≤10μm | ≤15μm | ≤20μm |
| BOW | ≤12μm | ≤15μm | ≤20μm | ≤25μm |
| WARP | ≤15μm | ≤20μm | ≤25μm | ≤30μm |
| Edge Exclusion | ≤3mm | |||
| Application | Conductivity for LED | Conductivity for LD | Semi-insulating for microelectronics | |
| Conduction Type | N-Type | N-Type | Insulating | |
| Dopant | Si-doping | Si-doping | Undoped | |
| Resistivity | (1~9)E-3Ω·cm | (1~9)E-3Ω·cm | ＞1E7Ω·cm | |
| Etch Pit Density(EPD) | ＜5000/cm2 | ＜500/cm2 | ＜5000/cm2 | |
| Carrier Concentration | (0.4~4)E18/cm3 | (0.4~2.5)E18/cm3 | N/A | |
| Mobility | ＞1000cm2/v.s | 1500~3000cm2/v.s | ＞4000cm2/v.s | |
Customization specifications：
* Various sizes and shapes such as 10*10mm.
* Various types:like P-Type(Zn-doped)
* Various orientations such as(111),(110),Off-Axis：2°/6°/10°.
* Various surface roughness such as slicing,lapping.
* GaAs crystal ingots are available.
Gallium arsenide(GaAs) is an inorganic compound,which is a zinc blende crystal structure, and a black-gray solid with a melting point of1238°C. It is stably below 600°C and is not corroded by non-oxidizing acids. Compared with single crystal silicon(Si), it belongs to the second generation of semiconductor materials and also is a III-V direct band gap semiconductor.
Gallium arsenide(GaAs) has a direct band gap, higher electron mobility, high-frequency low-noise, and high conversion efficiency and other advantages in comparison to silicon(Si).
| Crystal Structure | Cubic |
| Lattice Constant(nm) | a=5.6534 Å |
| Density(g/cm3) | 5.316 |
| Melting point（℃） | 1238 |
| Mohs Hardness(mohs) | 5.6 |
| Dielectric Constant | 13.1 |
| Band Gap(eV) | 1.424 |
| Breakdown Electrical Field (MV/cm) | 3.3 |
Thermal Conductivity(W/cm.K) | 0.55 |
| Thermal Expansion | 5.8*10-6/k |
| Refractive Index | 3.24-3.33 |
