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4 inch GaN Freestanding Substrate

Specific Information
GaN freestanding substrates, also known as gallium nitride wafers, offer excellent thermal conductivity and high crystalline quality, making them suitable for manufacturing high-power electronic and optoelectronic devices. Their mechanical stability and wide bandgap characteristics enable superior performance in high-frequency and high-power applications, including microwave communication and radar systems. With decreasing costs and advancing fabrication techniques, GaN freestanding substrates hold promising prospects for widespread application in various fields such as 5G communication, optical communication, and energy.
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  • specification
  • Properties
  • ItemFree-standing GaN Wafer(2~4inch)
    Diameter50.8±0.3mm76.2±0.3mm100.0±0.3mm
    Thickness400±30μm450±30μm450±30μm
    Surface Orientation(0001) ± 0.2°Ga face
    Off-cut0.5°C-plane off angle toward M-axis
    0.0°C-plane off angle toward A-axis
    Primary Flat OrientationM-plane (10-10) ± 2.0˚
    Primary Flat Length16.0±1.0mm22.0±1.0mm32.0±1.5mm
    Secondary Flat OrientationGa face up: 90.0˚ CW from Primary ± 5.0˚
    Secondary Flat Length8.0±1.0mm11.0±1.0mm18.0±1.5mm
    Front Surface Finish≤ 0.3 nm(10μm ×10μm)
    Back Surface FinishPolished; Etched
    Laser MarkBack side:N-Face
    TTV≤15μm≤25μm≤30μm
    BOW≤20μm≤30μm≤40μm
    WARP≤30μm≤45μm≤60μm
    Edge Exclusion≤5 mm

    Doping/Resistivity

    Semi-Insulating(Carbon):Resistivity≥1E8 ohm-cm

    N-type(Silicon): Resistivity≤0.05 ohm-cm

    UID(Undoped):Resistivity≤0.2 ohm-cm


    Customization specifications:

    * Various sizes and shapes such as 10*10mm.

    * Various thicknesses:0.1~1.0mm

    * Various surface roughness such as slicing,lapping.


  • Gallium nitride (GaN) is a compound of nitrogen and gallium, a semiconductor with a direct bandgap of III and V, and has a wide energy gap of 3.4 electron volts. Gallium nitride (GaN) has the advantages of high temperature resistance, high electron saturation migration rate, high thermal conductivity, high current density and low conduction loss, which can significantly reduce power loss and heat dissipation load. It has broad prospects in the application of optoelectronics, lasers, high-temperature and high-power devices and high-frequency microwave devices.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=3.186Å c=5.186Å
    Density(g/cm3)6.15
    Melting point(℃)2500
    Mohs Hardness(mohs)9.5
    Dielectric Constant8.9
    Band Gap(eV)3.45
    Breakdown Electrical Field (MV/cm)4.9
    Thermal Conductivity(W/cm.K)2.3
    Thermal Expansion a=5.6*10-6/k c=3.2*10-6/k


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