Advances in 4H-SiC Single Crystal Growth Technology and Its Future Development Trends
published on 2025-11-07
IntroductionSilicon carbide is a polytypic compound: depending on the stacking sequence of the silicon–carbon bilayers along the crystallographic direction, more than two hundred polytypes may occur. Among the common polytypes are 2H, 4H, 6H, 15R and 3C. Of these, 4H-SiC is preferred for high-voltage, high-temper
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