In heteroepitaxy, the substrate is more than a mechanical support. On r-plane sapphire — a substrate that intrinsically imposes anisotropic lattice mismatch — the geometry of the patterned template directly governs strain relaxation in the overgrown film. This study uses high-resolution X-ray diffraction (H

Epitaxial lateral overgrowth (ELO) is a classic approach for reducing defects in nitride epilayers. This study, conducted entirely on r-plane sapphire substrates, develops and compares two patterning strategies: the conventional one-dimensional stripe template and a novel two-dimensional chessboard-like microrod array.

Why Non-Polar GaN? The 5G and Power Electronics DriverWith the rollout of 5G mobile communications, demand for III-nitride-based power electronics and radio-frequency (RF) devices has surged. Gallium nitride (GaN) offers a unique combination of high breakdown voltage, high saturated electron velocity, and exceptional m

1. Technical OverviewDiamond substrate wafers are categorized into three core types based on structural characteristics: single-crystal diamond substrates, polycrystalline diamond substrates, and diamond thin films. These three categories differ significantly in grain structure, defect density, surface roughness, therm

1. Technical OverviewSingle-crystal diamond substrate wafers feature grain-boundary-free structure, ultra-low defect density, superior thermal conductivity uniformity, excellent optical homogeneity, and reliable insulation stability. Owing to these comprehensive advantages, they have become core substrate materials for

1. Technical OverviewFeaturing superior comprehensive physical and chemical properties, diamond substrate wafers have emerged as core high-end substrate materials for third‑ and fourth‑generation semiconductor high-power devices, high-frequency RF devices, quantum optical systems, and precision sensing platforms. Com

With the continuous upgrading of high-power continuous-wave lasers, pulsed lasers, and high-energy laser systems toward ultra-high flux, long service life and high precision, the core performance requirements for optical substrates have evolved from basic light transmittance to comprehensive capabilities including ther

Featuring an ultra-broad spectral transmission window covering the full band from deep ultraviolet (DUV), visible light, and near-infrared (NIR) to mid-infrared (MIR), fused silica substrates are one of the most adaptable core substrate materials for optical spectroscopy, laser transmission, and optoelectronic detectio

In high‑end optical fields including precision lithography, laser interferometric metrology, astronomical observation and high‑resolution imaging, fused silica substrates serve as indispensable core foundational materials. The imaging accuracy, beam parallelism and wavefront integrity of an entire optical system ulti

IntroductionHigh-quality, low-defect SiC substrates serve as the foundation for manufacturing high-performance power devices, yet they are not the final determining factor of device quality. Unlike mature silicon-based semiconductor processes, silicon carbide features extremely stable chemical bonds, bringing unique te