1. Destructive Inspection — Calibration Benchmark for Non-Destructive Detection of Quartz WafersDestructive inspection physically removes and chemically etches the surface layer of quartz substrate wafers to fully expose the subsurface damage layer (SSD). This method enables intuitive observation of internal micr

1. Invisible Performance Killer Hidden Beneath the Surface of Optical ComponentsFeaturing an ultra-low coefficient of thermal expansion, high transmittance across ultraviolet and infrared bands, excellent chemical inertness and superior optical uniformity, fused silica serves as a core optical substrate for inertial co

1. IntroductionAccurate dielectric characterization is the foundation of millimeter-wave device development. Traditional resonant cavity and optical measurement methods have inherent limitations: resonant testing only supports discrete frequency points; optical testing cannot reproduce chip-level quasi-TEM transmission

1. IntroductionWith the rapid iteration of 6G communication, millimeter-wave radar and terahertz devices, operating frequencies have extended to the 100–325 GHz sub-millimeter band. Traditional substrates such as silicon, ceramic and ordinary glass suffer from high dielectric loss, severe dispersion and poor proc

— An Ultrathin Diffusion Barrier Solution for Advanced Chip Copper InterconnectsIntroductionAs semiconductor manufacturing advances toward 7 nm, 3 nm, and more advanced nodes, back-end copper interconnects face severe scaling bottlenecks. Traditional Ta/TaN metal stacked liner/barrier layers have a total thicknes

— How Substrates Determine Thin-Film Quality and Device PerformanceIntroductionThe mainstream fabrication method for graphene relies on copper-foil-based CVD growth combined with wet transfer processes. Although technically mature, this approach has inherent limitations. The transfer procedure inevitably introduc

1. Product Positioning: Ga₂O₃ Single-Crystal Substrates – Core Carrier for Ultra-Wide Bandgap High-End DevicesCompared with the sapphire heteroepitaxy route, our self-developed EFG-grown β-Ga₂O₃ single-crystal substrates serve as the core base for high-end ultra-high voltage power devices, thoroughly sol

1. Core Product Advantages: Self-Developed Sapphire Substrates for Low-Cost Ga₂O₃ Epitaxy SystemAs a next-generation ultra-wide bandgap (UWBG) semiconductor, β-Ga₂O₃ features a 4.9 eV ultra-wide bandgap, an ultra-high breakdown field of 8 MV/cm, and excellent thermal stability, making it a core material for po

Polytype competition has long been the core bottleneck restricting the stable growth of high-quality 3C-SiC single crystals. Unlike the fixed gas-solid interface of the conventional PVT growth method, the top-seeded solution growth (TSSG) technique features tunable liquid-solid interfacial properties, which provides a

As a critical third-generation semiconductor material, silicon carbide (SiC) features outstanding high-temperature stability, high breakdown electric field, and excellent carrier mobility. Among its multiple polytypes, cubic 3C-SiC possesses unique advantages including lower interface state density and superior electro