In modern LED chip manufacturing, patterned sapphire substrates (PSS) serve as a core underlying technology that breaks the performance limitations of conventional flat sapphire substrates (FSS). It is widely acknowledged that PSS improves crystal quality by suppressing epitaxial threading dislocations and enhances lig

Nowadays, III-nitride LEDs have become the core of solid-state lighting, display backlighting, and ultraviolet optoelectronic devices. However, traditional LEDs grown on flat sapphire substrates (FSS) are plagued by low luminous efficiency, poor crystal quality, and high device loss, which seriously restrict their perf

Patterned sapphire substrate (PSS) is a critical material for improving the optoelectronic performance of III-nitride light-emitting diodes (LEDs). It effectively reduces the threading dislocation density (TDD) of GaN epitaxial layers, optimizes crystal quality, and enhances the light extraction efficiency (LEE) and li

From Microscopic Damage Evolution to Atomic-Scale Removal Mechanisms
Figure 1. Manufacturing process flow of silicon carbide wafers.
With the rapid growth of new energy vehicles, photovoltaic energy storage, rail transportation, and high-frequency communication industries, silicon carbide (SiC) has emerged as one of th

— Technological Evolution from Conventional Grinding to Atomic-Scale ManufacturingWith the rapid development of new energy vehicles, photovoltaic energy storage, AI servers, and 5G communications, the third-generation semiconductor material—silicon carbide (SiC)—is increasingly becoming a core substra

IntroductionWith the rapid growth of the third-generation semiconductor industry, 4H-SiC (4H Silicon Carbide) wafers have become essential in applications such as electric vehicles, photovoltaic energy storage, high-voltage inverters, smart grid systems, and 5G communications.
However, due to the intrinsic material cha

IntroductionWith the rapid growth of electric vehicles, photovoltaic energy storage systems, industrial power supplies, and high-frequency/high-voltage electronic devices, 4H-SiC (4H Silicon Carbide) wafers have become one of the most critical foundational materials in the third-generation semiconductor industry.
Howev

IntroductionAs the demand for high-efficiency power electronics continues to grow, silicon carbide (SiC) has emerged as one of the most important wide-bandgap semiconductor materials. Among various SiC polytypes, 4H-SiC has become the dominant substrate material for high-power and high-frequency electronic devices due

With the rapid development of advanced manufacturing, aerospace systems, deep-earth energy exploration, and high-power electronics, temperature sensors are increasingly required to operate reliably under extremely harsh conditions. In environments involving high temperature, high pressure, corrosion, and radiation expo

As third- and fourth-generation semiconductor technologies continue to advance, the demand for materials capable of operating under extreme conditions—such as high temperature, high voltage, and high frequency—has grown significantly. Among the emerging wide-bandgap semiconductor materials, diamond has attr