As the fields of power electronics, optoelectronics, and advanced sensing technologies continue to evolve, research institutions are demanding higher-quality silicon carbide (SiC) materials. As a leading representative of third-generation semiconductors, SiC stands out with its wide bandgap, high thermal conductivity, and excellent chemical stability — making it an essential foundation for high-power, high-frequency, and high-temperature device research.

JXT Technology Co.,Ltd. has dedicated years to the precision processing of semiconductor materials. Leveraging advanced surface engineering and crystal thinning technologies, we proudly introduce our 150 μm ultra-thin silicon carbide (SiC) substrate, engineered to meet the demanding needs of cutting-edge scientific research and device innovation.

1. Advanced Processing for Ultra-Thin Precision

Producing a 150 μm SiC wafer requires exceptional control over mechanical integrity and surface quality. JXT Technology employs a multi-stage thinning process that combines precision grinding with chemical mechanical polishing (CMP) to achieve a mirror-like surface roughness of Ra < 0.5 nm, while maintaining mechanical strength and low warp.

To minimize stress and prevent wafer breakage during thinning, we apply temporary bonding technology to support the substrate on a rigid carrier. This ensures superior flatness and structural stability even at ultra-thin thicknesses — a crucial advantage for research environments requiring precision alignment and reliable performance.

2. Exceptional Material Properties for Advanced Research

Thermal and Electrical Stability
With a thermal conductivity of up to 490 W/m·K, SiC offers excellent heat dissipation, making it ideal for high-power density and high-temperature experimental setups. Its wide bandgap (3.26 eV) also provides outstanding electrical stability under extreme voltage and temperature conditions.

Ideal Substrate for Epitaxy and Interface Studies
JXT’s 150 μm SiC substrates are polished and cleaned to research-grade quality, providing an ideal foundation for epitaxial growth and interface characterization. Researchers can use these substrates for GaN-on-SiC, graphene, or diamond heterostructure studies to explore new physical phenomena in composite materials.

Ultra-Thin Design for Emerging Devices
In MEMS, micro-sensors, and optoelectronic device research, thinner substrates help reduce thermal resistance and improve response time — offering researchers greater flexibility in experimental design and system integration.

3. Customization for Diverse Research Needs

Recognizing the diversity of research applications, JXT Technology provides a wide range of customizable options:

Polytype options: 4H-SiC or 6H-SiC

Doping types: N-type, P-type, or semi-insulating, with tailored resistivity ranges

Surface and orientation: Si-face or C-face available, with specific crystal orientations upon request

Wafer sizes: Available from 2-inch to 6-inch diameters

Each substrate undergoes strict quality control, including defect inspection, surface roughness measurement, and warp verification — ensuring every wafer meets research-grade standards.

4. Partnering with Researchers Worldwide

From fundamental material science to advanced device prototyping, JXT Technology’s 150 μm SiC substrates have been adopted by leading universities and research institutes for applications in power electronics, RF communications, MEMS, and quantum materials research.
 

At JXT Technology, we are committed to supporting scientific discovery through reliable, high-performance materials.

For detailed specifications, samples, or research collaboration inquiries, please visit www.jxtwafer.com or contact our technical team.
Let your next innovation begin with premium SiC materials.