As a third-generation semiconductor material, silicon carbide (SiC) not only offers the advantages of a wide band gap but also exhibits excellent thermal conductivity. In electric vehicles, electronic components typically generate significant heat during operation. Without effective heat dissipation, this heat can negatively impact both the performance stability and service life of the vehicle. Thanks to its superior thermal conductivity, silicon carbide is well-suited to address these thermal management challenges.

Silicon carbide wafers are generally classified into two types: N-type (conductive) and semi-insulating (HPSI). These two types exhibit different thermal conductivities, as shown below:
 

1. Thermal Conductivity of 4H-N SiC wafers: 3.7–4.2 W/cm·K
2. Thermal Conductivity of 4H-HPSI SiC wafers: 3.9–4.9 W/cm·K
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Recent testing by JXT Technology Co., Ltd. examined the thermal conductivity of semi-insulating SiC wafers under various temperature conditions, yielding the following results:


From the analysis, it is evident that 4H-HPSI SiC wafers exhibit better thermal conductivity than their N-type counterparts. This enhanced property has drawn attention from developers, with some beginning to explore the use of semi-insulating SiC wafers as heat spreaders or heat sinks in thermal management systems.
This emerging application is still under evaluation, and its long-term impact remains to be seen.