Silicon carbide (SiC) has emerged as a vital material for power electronics, RF devices, and photonics research due to its superior thermal conductivity, high breakdown electric field, and exceptional optical properties. While much attention has been given to larger wafers, 3-inch SiC substrates play a crucial role in research, prototyping, and small-scale device manufacturing. In this blog, we explore the applications, advantages, and current status of 3-inch SiC wafers in China.

Key Applications of 3-Inch SiC Substrates

1. Power Electronics

Ideal for developing MOSFETs, Schottky diodes (SBDs), and IGBTs.

The smaller size is perfect for laboratory development and prototype testing.

2. RF Devices

Semi-insulating 3-inch wafers are used in microwave power amplifiers, antenna drivers, and other RF components.

Enables researchers to explore high-frequency device performance and thermal management.

3. Photonics and Optoelectronics Research

High-purity undoped wafers are utilized for photonic crystals, nonlinear optical materials, and sensor development.

Supports experiments on optical transmittance, refractive index, and defect analysis.

4. Epitaxial Growth and Material Research

Serves as the base for SiC epitaxial layer growth (4H-SiC or 6H-SiC).

Allows testing of different growth techniques and their effects on crystal quality and defect density.

5. Research and Educational Use

Cost-effective and suitable for universities and research institutions.

Facilitates material characterization experiments and hands-on training for students.

Advantages of 3-Inch SiC Wafers

Lower cost compared to larger wafers, making them accessible for R&D.

High crystal quality for precise experimentation.

Flexible for prototyping, enabling rapid iteration of device designs.

Industry Status in China

China has established multiple production lines for 3-inch SiC substrates, catering mainly to research, prototyping, and small-batch device manufacturing. Production techniques include Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), covering 4H-SiC, 6H-SiC, and 3C-SiC types.

Companies like JXT Technology Co., Ltd. offer SiC substrates ranging from 2 inches to 12 inches, including high-purity undoped, semi-insulating, and conductive wafers.

The establishment of these production lines reflects China's advancing technology and growing industrial capability in SiC substrates. As demand continues to rise, the applications and production capacity of 3-inch wafers are expected to expand further.

Conclusion

3-inch SiC substrates occupy a vital niche in the SiC ecosystem, bridging the gap between research and industrial-scale production. Their affordability, high quality, and versatility make them indispensable for power electronics R&D, RF device prototyping, and photonics research. With China's domestic production capabilities steadily improving, 3-inch SiC wafers are set to play an increasingly important role in both scientific exploration and small-scale commercial applications.