With the rapid advancement of wide bandgap semiconductor technology, silicon carbide (SiC) has emerged as a key material in the field of high-frequency and high-power devices.
Its exceptional physical properties—wide bandgap, high thermal conductivity, high breakdown electric field, and high electron mobility—make it an ideal choice for applications such as RF power amplifiers, high-frequency power supplies, 5G communication systems, and electric vehicle (EV) inverters.
This article explores the technical advantages and application scenarios of SiC materials in high-frequency semiconductor devices.

1. Application in RF Power Amplifiers

The application of SiC in RF power amplifiers primarily benefits from its high power density and superior frequency performance.
Typical SiC devices used in RF power amplifiers include SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) and SiC MESFETs (metal–semiconductor field-effect transistors).

At the same operating frequency, SiC devices typically achieve 2–3 times higher power density than silicon-based devices and can operate at frequencies extending into the hundreds of MHz to GHz range.
For example, at 100 MHz, a SiC-based amplifier can reach an output power of 10 W/mm, while a conventional silicon-based amplifier delivers only about 4 W/mm.

This performance advantage stems from SiC’s intrinsic material properties:

Wide bandgap (~3.26 eV)

High thermal conductivity (~490 W/m·K)

High critical electric field (~2.8×10⁶ V/cm)

In addition, SiC’s high thermal conductivity effectively addresses heat dissipation challenges in high-power-density designs.
Under a power density of 8 W/mm and a heat dissipation area of 2 mm², the device thermal resistance is as low as 0.001 W⁻¹·K⁻¹, making SiC an ideal material for compact and reliable RF power amplifier systems.

2. Application in High-Frequency Switching Power Supplies

In high-frequency switching power supplies (HF SMPS), SiC devices replace traditional silicon components to deliver higher switching speeds and lower losses, significantly improving power conversion efficiency.
Typical devices include SiC Schottky Barrier Diodes (SiC SBDs) and SiC MOSFETs.

At an operating voltage of 600 V, a SiC MOSFET exhibits an on-resistance of only 80 mΩ, compared with 230 mΩ for a silicon MOSFET.
The switching speed improves dramatically—from 200 ns for silicon to 50 ns for SiC—greatly reducing switching losses.

Thanks to these advantages, SiC-based high-frequency power supplies are now widely adopted in:

Photovoltaic (PV) inverters

Industrial high-efficiency power systems

UPS (Uninterruptible Power Supply) systems

These systems maintain high efficiency and thermal stability even under demanding high-frequency operating conditions.

3. Application in 5G Base Stations and Satellite Communications

In advanced communication systems, SiC technology has become an ideal solution for high-frequency, high-power RF modules.
In 5G base station power amplifier modules, SiC devices can support operating frequencies up to 30 GHz, enabling broader bandwidth and higher data throughput.

In satellite communication systems, SiC devices also demonstrate excellent radiation resistance—approximately three times higher than silicon—allowing stable operation in high-energy particle environments.

Performance comparisons show that:

At 2 GHz, SiC-based power amplifiers deliver 20 W output power with 65% efficiency;

Under the same conditions, silicon-based devices achieve only 10 W output and 40% efficiency.

These results underscore SiC’s potential as a key material for future high-reliability RF communication systems.

4. Application in EV Inverters

In electric vehicles (EVs), the inverter serves as the “heart” of the powertrain, directly affecting acceleration performance and driving range.
SiC devices, with their lower conduction losses and faster switching speeds, are increasingly replacing traditional silicon-based IGBTs (Insulated Gate Bipolar Transistors).

Experimental data show that:

At 300 V DC, SiC inverters achieve an efficiency of 98%, compared with 92% for silicon-based inverters;

Power density reaches 60 kW/L, double that of silicon counterparts;

The maximum operating temperature can reach 200°C, significantly higher than silicon’s 150°C limit.

These advantages allow SiC-based inverters to reduce system size and weight while enhancing energy efficiency, reliability, and vehicle range.

5. Conclusion: SiC as the Core Driver of High-Frequency Electronics

As a third-generation wide bandgap semiconductor, silicon carbide is rapidly transforming the landscape of high-frequency and high-power electronics.
From RF communication to electric vehicles, and from industrial power systems to satellite technologies, SiC is redefining the limits of semiconductor performance.

With the ongoing commercialization of 6-inch and larger SiC wafers and continuous cost optimization, SiC-based devices are expected to achieve an ideal balance of higher efficiency, greater reliability, and lower energy consumption, paving the way for the next generation of high-performance electronic systems.

About Us · JXT Technology Co., Ltd.

JXT Technology Co., Ltd. specializes in the research, development, and supply of silicon carbide materials, offering 2-inch to 8-inch SiC substrates and wafers.
We provide customized thickness, dimension, and cutting options to meet the diverse needs of R&D, power device fabrication, and RF component development.

For more information or sample requests, please contact us — we look forward to advancing wide bandgap semiconductor innovation together.