HOME > PRODUCTS > Silicon Carbide Wafer (SiC Wafer)

Ultra-thin SiC Wafer (4H-N Type)

Specific Information

The ultra-thin silicon carbide (SiC) substrate is a high-performance base material made from high-purity single-crystal SiC, typically with a thickness ranging from several tens to a few hundred micrometers. It features excellent thermal conductivity, high hardness, superior electrical insulation, and a low thermal expansion coefficient. Even at extremely thin dimensions, the ultra-thin SiC substrate maintains outstanding thermal stability and mechanical strength. It is widely used in high-power-density devices such as SiC and GaN power chips, high-frequency communication modules, and advanced packaging, effectively reducing thermal resistance and enhancing device cooling efficiency and reliability—making it a key material for next-generation high-performance electronics.

Get a free quote

specification
Properties

Item	4H n-type SiC substrate（2~8inch）
Diameter	50.8±0.3mm	76.2±0.3mm	100.0±0.3mm	150.0±0.5mm
Thickness	150±25μm	170±25μm	200±25μm	250±25μm
Surface Orientation	Off-Axis：4°toward <11-20>±0.5°
Primary Flat Orientation	Parallel to <11-20>±1°
Primary Flat Length	16.0±1.5mm	22.0±1.5mm	32.5±2.0mm	47.5±2.0mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Primary flat±5.0°			N/A
Secondary Flat Length	8.0±1.5mm	11.0±1.5mm	18.0±2.0mm	N/A
Resistivity	0.014～0.028Ω•cm
Front Surface Finish	Si-Face: CMP, Ra<0.5nm
Back Surface Finish	C-Face: Optical Polish, Ra<1.0nm
Laser Mark	Back side: C-Face
TTV	≤10μm	≤15μm	≤15μm	≤15μm
BOW	≤25μm	≤25μm	≤30μm	≤40μm
WARP	≤30μm	≤35μm	≤40μm	≤60μm
Edge Exclusion	≤3 mm

Customization specifications：

* Various sizes and shapes such as 10*10mm

* Various thicknesses:0.1~20mm

* Various orientations such as Off-Axis：8°toward <11-20>±0.5°

* Various surface roughness such as slicing,lapping,polishing.

* Silicon carbide crystal ingots are available.

Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.

Crystal Structure	Hexagonal
Lattice Constant(nm)	a=3.076Å c=10.053Å
Density(g/cm³)	3.21
Melting point（℃）	2830
Mohs Hardness(mohs)	9.2
Dielectric Constant	9.66
Band Gap(eV)	3.26
Breakdown Electrical Field (MV/cm)	3.1
Thermal Conductivity(W/cm.K)	4.5
Thermal Expansion	4.7*10^-6/k
Refractive Index	2.6767～2.6480

Ultra-thin SiC Wafer (4H-N Type)

Recommended Products

2 inch SiC Wafer (4H-N Type)

3 inch SiC Wafer (4H-N Type)

4 inch SiC Wafer (4H-N Type)

6 inch SiC Wafer (4H-N Type)