| Item | 4H n-type SiC substrate | ||||
| Diameter | 5*5mm | 10*10mm | 15*15mm | 20*20mm | 25*25mm |
| Thickness | 350±25μm | 350±25μm | 350±25μm | 350±25μm | 350±25μm |
| Surface Orientation | Off-Axis：4°toward <11-20>±0.5° | ||||
| Resistivity | 0.014～0.028Ω•cm | ||||
| Front Surface Finish | Si-Face: CMP | ||||
| Back Surface Finish | C-Face: Optical Polish | ||||
| Laser Mark | Back side: C-Face | ||||
Customization specifications：
* Various sizes and shapes such as 5*10mm，10*15mm，20*25mm
* Various thicknesses:0.1~20mm
* Various orientations such as Off-Axis：8°toward <11-20>±0.5°
* Various surface roughness such as slicing,lapping,polishing.
* Silicon carbide crystal ingots are available.
Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | a=3.076Å c=10.053Å |
| Density(g/cm3) | 3.21 |
| Melting point（℃） | 2830 |
| Mohs Hardness(mohs) | 9.2 |
| Dielectric Constant | 9.66 |
| Band Gap(eV) | 3.26 |
| Breakdown Electrical Field (MV/cm) | 3.1 |
| Thermal Conductivity(W/cm.K) | 4.5 |
| Thermal Expansion | 4.7*10-6/k |
| Refractive Index | 2.6767～2.6480 |
