The 8-inch N-type SiC double-side polished substrate is a silicon carbide wafer with a diameter of 8 inches (approximately 200 millimeters), processed through double-side polishing to achieve high flatness and smoothness, utilized in the manufacturing of high-power electronic devices such as power MOSFETs, Schottky diodes, and high-frequency RF devices due to its excellent material properties for efficient and reliable applications.

                                         Specifications of  8 inch N-type SiC Double-side Polished Substrate

As an outstanding supplier of silicon carbide substrates, JXT TECHNOLOGY is committed to providing high-quality SiC materials.With advanced manufacturing processes and stringent quality control standards, we ensure our products exhibit excellent flatness and surface smoothness. As a supplier of silicon carbide materials, we focus on meeting customer demands and providing crucial support to the high-power electronic device manufacturing industry.