Among third-generation semiconductor materials, silicon carbide (SiC) stands out for its wide bandgap, high thermal conductivity, and high breakdown field strength, making it indispensable for high-power, high-frequency, and high-temperature electronics. In particular, semi-insulating silicon carbide (SI-SiC) wafers, with their extremely high resistivity (>10⁵ Ω·cm) and excellent thermal properties, have become an essential platform for scientific research and process development.

The 2 inch SI-SiC wafer, due to its manageable size and cost-effectiveness, is widely used in research laboratories and pilot projects. It plays a crucial role as a bridge between material research and industrial-scale applications.

Major Research Directions

1. GaN-on-SiC Epitaxy and Power Devices

2 inch SI-SiC wafers are frequently used as substrates for GaN epitaxy, enabling studies on stress control, epitaxial quality improvement, and parasitic capacitance reduction. With their superior thermal conductivity and electrical isolation, they support the development of high-electron-mobility transistors (HEMTs) and RF power amplifiers, widely applied in 5G communications, satellite links, and radar systems.

2. RF and Microwave Devices

Due to their insulating properties, SI-SiC wafers are key to the development of millimeter-wave/terahertz devices and acoustic wave filters (SAW/BAW). They help optimize high-frequency performance, reduce signal loss, and support research in the 30–300 GHz frequency range.

3. Materials Science and Defect Engineering

Researchers utilize 2-inch wafers to investigate crystal defects (e.g., micropipes, stacking faults, dislocations) and compensation doping mechanisms (e.g., vanadium doping). These studies aim to enhance material uniformity, resistivity, and epitaxial compatibility, laying the foundation for scaling up high-quality SiC wafer production.

4. Aerospace and Harsh-Environment Electronics

The stability of SI-SiC under high temperatures (>500°C) and radiation exposure makes it an ideal material for exploring aerospace and energy-related high-temperature and radiation-hardened devices.

5. Novel Sensors and MEMS

2-inch SI-SiC wafers are also employed in developing high-temperature gas sensors, pressure sensors, and accelerometers. These MEMS devices can operate in extreme conditions such as high temperature or corrosive environments.

6. Emerging Quantum and Optoelectronic Research

Quantum technologies: Studies on spin states of defect centers in SiC for quantum sensing and quantum computing.

Optoelectronics: Exploration of GaN/InAlN-on-SiC lasers and photodetectors for advanced photonic systems.

Potential Emerging Research Areas

Beyond the mainstream applications above, 2-inch SI-SiC wafers also provide opportunities in a wide range of cutting-edge research fields:

Photonics and Nonlinear Optics

Development of integrated optical components such as micro-ring resonators and waveguides.

Investigation of nonlinear phenomena such as second-harmonic generation (SHG) and optical parametric oscillation.

Spintronics

Leveraging spin defect centers in SiC for quantum bits, magnetoelectric coupling devices, and spin-based memory.

High-Power Pulsed Devices and Electronic Switches

Research into high-voltage pulsed devices and fast-switching electronics, minimizing parasitic currents.

Micro- and Nano-Device Research

Fabrication of SiC nanowires, thin films, and quantum dots, with studies on their optical, electrical, and thermal properties.

Energy and Nuclear Applications

High-energy particle irradiation studies to evaluate material stability in nuclear reactors and space radiation environments.

Development of high-temperature nuclear sensors.

Thermal Management and Interface Engineering

Research on high-thermal-conductivity interface materials (TIMs).

Investigation of thermal resistance in GaN/SiC and AlGaN/SiC heterostructures.

Cross-Disciplinary Frontiers

Terahertz electronics, superconductor–semiconductor hybrid devices, and explorations in topological electronics.

✅ Conclusion

Although 2 inch SI-SiC wafers are not the mainstream size for large-scale industrial production, they hold unique advantages in scientific research and early-stage development:

Cost-effective, ideal for laboratory-scale experiments;

Superior material properties, combining high thermal conductivity with excellent electrical insulation;

Versatile applications, enabling exploration across multiple disciplines and emerging technologies.

These wafers serve not only as compact platforms for laboratory innovation but also as a foundation material driving progress in 5G, radar, aerospace, MEMS, quantum technologies, and optoelectronics.

The 2 inch semi-insulating SiC wafer is more than just a research substrate—it is a cornerstone for future semiconductor innovation.