| Item | Gallium Oxide Substrate（β-Ga2O3<001> Substrate） | |
| Diameter | 50.8±0.5mm | 100.0±0.5mm |
| Thickness | 650±30μm | 650±30μm |
| Surface Orientation | (001)±1.0° | |
| Primary Flat Orientation | (100)±1.0° | |
| Primary Flat Length | 16.0±2.5mm | 32.5±2.5mm |
| Secondary Flat Orientation | (010)±1.0° | |
| Secondary Flat Length | 8.0±2.5mm | 18.0±2.5mm |
| Conduction Type | N-Type | |
| Dopant | Sn-doping | |
| Front Surface Finish | CMP | |
| Back Surface Finish | CMP | |
| Laser Mark | N/A | |
| FWHM | (100):＜350arcsec; (010):＜350arcsec | |
| TTV | ≤10mm | ≤20mm |
| Edge Exclusion | ≤3mm | |
Customization specifications：
* 2~4inch Ga2O3 on Ga2O3 Homoepitaxial wafer（by HVPE & MBE).
* Various sizes and shapes such as 5*5mm,10*10mm.
* Various orientations such as(100),(010),(-201).
* Various types like Fe-doped,Si-doped,undoped
* Various surface roughness such as slicing,lapping,polishing.
Gallium(III) oxide(Ga2O3)is an inorganic compound and ultrawide bandgap of over 4.5 eV semiconductor.There are Five types of Ga2O3 polymorphs (α,β,γ,δ,ε), and the β phase with a melting point of 1900 ˚C is the most stable form.β-Ga2O3 has the β-gallia monoclinic structure with lattice constants of 1.22nm, 0.3nm, and 0.58nm in the a,b,c axes,and the angle between the a and c axes is about 104°.
| Crystal Structure | Monoclinic |
| Lattice Constant(nm) | a=12.23Å |
| b=3.04Å | |
| c=5.80Å | |
| Density(g/cm3) | 5.95 |
| Melting point（℃） | 1900 |
| Mohs Hardness(mohs) | 5~6 |
| Dielectric Constant | 10 |
| Band Gap(eV) | 4.8 |
| Breakdown Electrical Field (MV/cm) | 10.3 |
| Thermal Conductivity(W/cm.K) | 0.11-0.27 |
| Thermal Expansion | a=4.70×10-6/k |
| b=5.45×10-6/k | |
| c=5.35×10-6/k |
